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量子点通信单光子发射器中光谱亮度变化的起源

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发表于 2019-1-16 12:45:15 | 只看该作者 回帖奖励 |倒序浏览 |阅读模式
Origin of spectral brightness variations in InAs/InP quantum dot telecom single photon emitters InAs / InP
量子点通信单光子发射器中光谱亮度变化的起源

Journal of Vacuum Science & Technology B 37, 011202 (2019);

https://doi.org/10.1116/1.5042540

Christopher J. K. Richardson1,a), Richard P. Leavitt1, Je-Hyung Kim2, Edo Waks2,3, Ilke Arslan4, and Bruce Arey4
Hide Affiliations
?1Laboratory for Physical Sciences, University of Maryland, 8050 Greenmead Drive, College Park, Maryland 20740
?2Department of Electrical and Computer Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742
?3Joint Quantum Institute, University of Maryland and the National Institute of Standards and Technology, College Park, Maryland 20742
?4Fundamental and Computational Science Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352
?a)Electronic mail: Richardson@lps.umd.edu

ABSTRACT
摘要

Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski–Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3?μμm telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55?μμm telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55?μμm wavelength telecommunication systems.

? ?? ???长距离量子通信依赖于在通信波长上有效地生成和制备单光子的能力。使用改进的Stranski-Krastanov生长范式在分子束外延系统中在InP表面上生长低密度InAs量子点。这种材料是1.3?μμm通信频段中明亮且难以区分的单光子的一种来源。这里,生长参数的研判以相图表示,而低温-光致发光和原子分辨率图像则用于关联结构和光谱性能。这项工作确定了特定的堆垛层错和V-形缺陷,它们可能是在1.55?μμm电信波长下观察到的低亮度发射的原因。成像缺陷的不同位置可能为未来开发c-波段,1.55?μμm波长通信系统下InAs / InP单光子源提供指导。


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